300nm-1000nm Si Photodiode for Power Detector
300nm-1000nm SI Photodiode for Power detector Features1.High response,flat structure of SI PIN detector2.Low capacitance and low dark current3.Detecting wavelength of 300-1000nm Optical & Electrical CharacteristicsParameterSymbolMin.Typ. Max.UnitTest ConditionWavelength Rangeλ300-1000......
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Product Description
300nm-1000nm SI Photodiode for Power detector
Features
1.High response,flat structure of SI PIN detector
2.Low capacitance and low dark current
3.Detecting wavelength of 300-1000nm
Optical & Electrical Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
Wavelength Range | λ | 300 | - | 1000 | nm | - |
Power Range | P | -70 | - | +3 | dBm | V,=5V |
Active Diameter | Ad |
| 100 |
| um | - |
Dark Current | Id | - | 0.5 | 1 | nA | - |
Responsivity | R | - | 0.40 | 0.45 | A/W | λ=850 nm |
Frequency Bandwidth | Bw |
| 1000 |
| MHz |
|
Capacitance | Ct | - | 0.8 | 1 | Pf | - |
Response Time | Tr | - | - | 1 | ns | - |
Order Information
SIPD-XXXXX
SI | PD | -X | X | X | X | X |
Mode | Product Type | Bandwidth | Connector | Pigtail Length | Fiber Type | Responsivity |
|
| 01:1Gb/s | 1:FC/APC 2:FC/PC 3:SC/APC 4:SC/PC 5:LC/PC 6:LC/APC W:Without | 05:0.5M 10:1.0M 15:1.5M | S4:SM 4um S9:SM 9um M5:MM 50 M6:MM 62.5
| R40:0.40~0.45A/W
|
